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| SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6439/D The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the 225 to 400 MHz frequency range. * Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc Output Power = 60 Watts over 225 to 400 MHz Band Minimum Gain = 7.8 dB @ 400 MHz * Built-In Matching Network for Broadband Operation Using Double Match Technique * 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR * Gold Metallization System for High Reliability Applications 2N6439 60 W, 225 to 400 MHz CONTROLLED "Q" BROADBAND RF POWER TRANSISTOR NPN SILICON CASE 316-01, STYLE 1 MAXIMUM RATINGS* Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Device Dissipation @ TC = 25C (1) Derate above 25C Storage Temperature Range Symbol VCEO VCBO VEBO PD Tstg Value 33 60 4.0 146 0.83 -65 to +200 Unit Vdc Vdc Vdc Watts W/C C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 1.2 Unit C/W ELECTRICAL CHARACTERISTICS* (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) Emitter-Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) V(BR)CEO V(BR)CES V(BR)EBO ICBO 33 60 4.0 -- -- -- -- -- -- -- -- 2.0 Vdc Vdc Vdc mAdc NOTE: (continued) 1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF amplifiers. * Indicates JEDEC Registered Data. 1 ELECTRICAL CHARACTERISTICS* -- continued (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc) hFE 10 -- 100 -- DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) Cob -- 67 75 pF BROADBAND FUNCTIONAL TESTS (Figure 6) Common-Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 60 W, f = 225-400 MHz) Electrical Ruggedness (Pout = 60 W, VCC = 28 Vdc, f = 400 MHz, VSWR 30:1 all phase angles) GPE No Degradation in Output Power 7.8 8.5 -- dB -- NARROW BAND FUNCTIONAL TESTS (Figure 1) Common-Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 60 W, f = 400 MHz) Collector Efficiency (VCC = 28 Vdc, Pout = 60 W, f = 400 MHz) * Indicates JEDEC Registered Data. GPE 7.8 55 10 -- -- -- dB % C8 C5 C1 L1 C7 C11 C2 L3 C6 L5 DUT L2 C4 C3 R1 C1 to C4, C11 -- 4.0-40 pF C5 to C8 -- 33 pF C9 -- 1000 pF C10 -- 5.0 F R1 -- 15 L1, L2 -- 3/16 x 1 Copper Strap L3 -- 1.5 H L4 -- 10 H L5 -- 1 Turn #16 AWG, 5/16 I.D. L4 C9 C10 VCC = 28 V Figure 1. 400 MHz Test Amplifier (Narrow Band) 2 NARROW BAND DATA 100 Pout , OUTPUT POWER (WATTS) 80 60 40 20 0 200 VCC = 28 V Pin = 8 W 6W 4W 120 Pout , OUTPUT POWER (WATTS) 100 80 60 40 20 VCC = 28 V f = 225 MHz 400 MHz 2W 250 300 350 f, FREQUENCY (MHz) 400 450 0 2 4 6 8 10 12 14 Pin, INPUT POWER (WATTS) 16 18 20 Figure 2. Pout versus Frequency Figure 3. Output Power versus Input Power 12 G PE , COMMON EMITTER AMPLIFIER POWER GAIN (dB) Pout = 60 W VCC = 28 V 100 Pout , OUTPUT POWER (WATTS) f = 400 MHz 80 Pin = 6 W 60 40 20 0 10 4W 11 10 9 8 200 250 300 350 f, FREQUENCY (MHz) 400 450 14 18 22 VCC, SUPPLY VOLTAGE (VOLTS) 26 30 Figure 4. Power Gain versus Frequency Figure 5. Output Power versus Supply Voltage 100 Pout , OUTPUT POWER (WATTS) f = 225 MHz 80 Pin = 8 W 60 4W 40 20 0 10 14 18 22 VCC, SUPPLY VOLTAGE (VOLTS) 26 30 Figure 6. Output Power versus Supply Voltage 3 R1 B C13 + L1 L2 DUT 50 LINE T1 C1 L4 0.8 C3 C4 C5 C6 C7 A L5 0.5 C8 C11 4:1 RFC1 C14 C16 C15 VCC C12 T2 50 LINE 4:1 C2 C9 C10 A L3 R2 C17 C1 -- 68 pF C2, C4, C8, C10 -- 27 pF C3, C5, C11 -- 10 pF C6, C7 -- 51 pF C9 -- 1.0-10 pF JOHANSON C12 -- 100 pF C13, C15 -- 680 pF C14, C16 -- 1.0 F, 35 V Tantalum C17 -- 0.1 F, ERIE Red Cap RFC1 -- Ferrite Bead Choke, Feroxcube VK200 19/4B B -- Ferroxcube 56-590-65/4B Ferrite Bead T1, T2 -- 25 Ohms (UT25) Miniature Coaxial Cable, 1 turn R1 -- 11 , 1.0 W R2 -- 20 , 1/4 W L1 -- 10 Turns, #22 AWG, 1/8 I.D. L2 -- 4 Turns, #16 AWG, 1/4 I.D. L3 -- 6 Turns, #24 AWG, 1/8 I.D. L4, L5 -- 1 x 0.25 Microstrip Line Board Material 0.031 Thick Teflon-Fiberglass Figure 7. 225 to 400 MHz Broadband Test Circuit Schematic BROADBAND DATA (Circuit, Figure 7) 10 8 6 4 2 0 EFFICIENCY (%) Pout = 60 W VCC = 28 V 100 80 60 40 Pout = 60 W VCC = 28 V G PE , POWER GAIN (dB) 20 0 200 250 300 350 f, FREQUENCY (MHz) 400 200 250 300 350 f, FREQUENCY (MHz) 400 Figure 8. Power Gain versus Frequency Figure 9. Efficiency versus Frequency 4 6 5 INPUT VSWR 4 .3 Pout = 60 W VCC = 28 V 0.1 0.2 400 ZOL* 450 450 f = 225 MHz 0.1 Zin 275 Pout = 60 W, VCC = 28 V 350 3 2 1 200 250 300 350 f, FREQUENCY (MHz) 400 275 350 400 FREQUENCY MHz ZOL* = Conjugate of the optimum load 225 ZOL* = impedance into which the device 275 ZOL* = output operates at a given output 350 ZOL* = power, voltage and frequency. 400 450 f = 225 MHz Zin OHMS 0.7 + j1.6 0.9 + j2.2 2.2 + j2.1 1.2 + j0.6 0.5 + j1.6 ZOL* OHMS 2.2 - j1.8 2.1 - j0.9 2.1 - j0.1 2.0 + j0.2 1.9 + j0.9 Figure 10. Input VSWR versus Frequency Figure 11. Series Equivalent Input-Output Impedance 5 PACKAGE DIMENSIONS D R F 4 3 NOTES: 1. FLANGE IS ISOLATED IN ALL STYLES. DIM A B C D E F H J K L N Q R U STYLE 1: PIN 1. 2. 3. 4. INCHES MIN MAX 24.38 25.14 12.45 12.95 5.97 7.62 5.33 5.58 2.16 3.04 5.08 5.33 18.29 18.54 0.10 0.15 10.29 11.17 3.81 4.06 3.81 4.31 2.92 3.30 3.05 3.30 11.94 12.57 MILLIMETERS MIN MAX 0.960 0.990 0.490 0.510 0.235 0.300 0.210 0.220 0.085 0.120 0.200 0.210 0.720 0.730 0.004 0.006 0.405 0.440 0.150 0.160 0.150 0.170 0.115 0.130 0.120 0.130 0.470 0.495 K 1 Q 2 L B J E N H A U C EMITTER COLLECTOR EMITTER BASE CASE 316-01 ISSUE D Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 6 |
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